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| AP9916H/J Advanced Power Electronics Corp. Low on-resistance Capable of 2.5V gate drive Low drive current www..com Single N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 18V 25m 35A G S Drive Requirement Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=125 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 18 12 35 16 90 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 110 Unit /W /W Data and specifications subject to change without notice 200227032 AP9916H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 18 0.5 - Typ. 0.03 18 17.5 1.2 7.9 7.3 98 25.6 98 527 258 112 Max. Units 25 40 1 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A www..com VGS(th) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=18V, VGS=0V VDS=18V ,VGS=0V VGS= 12V ID=18A VDS=18V VGS=5V VDS=10V ID=18A RG=3.3,VGS=5V RD=0.56 VGS=0V VDS=18V f=1.0MHz gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 35 90 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=35A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9916H/J 100 80 T C =25 o C V G =4.5V 80 70 T C =150 o C V G =4.5V 60 ID , Drain Current (A) ID , Drain Current (A) V G =3.5V 60 www..com V G =3.5V 50 40 40 V G =2.5V V G =2.5V 30 20 20 10 V G =1.5V V G =1.5V 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 1.8 I D= 6 A 28 I D =6A 1.6 T C =25 C 1.4 o V G =4.5V 26 Normalized R DS(ON) RDS(ON) (m ) 24 1.2 22 1.0 20 0.8 18 1 2 3 0.6 V GS (V) 4 5 6 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP9916H/J 40 60 35 50 30 www..com ID , Drain Current (A) 40 25 20 PD (W) 25 50 75 100 125 150 30 15 20 10 10 5 0 0 0 T c , Case Temperature ( C) o T c , Case Temperature ( o C) 50 100 150 Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 100 10us Normalized Thermal Response (R thjc) DUTY=0.5 0.2 ID (A) 10 100us 1ms 10ms 100ms 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 PDM t T Duty factor = t/T Peak Tj = P DM x Rthjc + TC 1 T c =25 o C Single Pulse 0.1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9916H/J 16 1000 f=1.0MHz 14 I D =18A V DS =10V V DS =15V V DS =18V Ciss VGS , Gate to Source Voltage (V) 12 www..com 10 8 Coss C (pF) 100 Crss 6 4 2 0 0 5 10 15 20 25 30 35 40 45 10 1 5 9 13 17 21 25 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.2 10 0.95 T j =150 C o 1 VGS(th) (V) 1.2 1.6 T j =25 o C IS (A) 0.7 0.1 0.45 0.01 0 0.4 0.8 0.2 -50 V SD (V) T j , Junction Temperature ( o C ) 0 50 100 150 Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP9916H/J RD VDS 90% www..com D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 5v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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